050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 50 khz operation @ 800v, 16a ? low gate charge ? 20 khz operation @ 800v, 30a ? ultrafast tail current shutoff ? rbsoa rated power mos 7 ? igbt g c e maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 1200 3 4.5 6 3.3 3.9 3.0 750 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 750a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 45a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 45a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l APT45GP120JDF2 1200 20 30 75 34 170 170a @ 960v 329 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c reverse bias safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. sot-227 g e e c isotop ? "ul recognized" APT45GP120JDF2 1200v
050-7432 rev c 8-2004 APT45GP120JDF2 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 45a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 600v v ge = 15v i c = 45a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 45a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 3935 300 55 7.5 185 25 80 170 18 29 100 38 900 1870 905 18 29 150 80 900 3080 2255 unit pf v nc a ns j ns j unit c/w gm min typ max .38 1.10 29.2 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance wtih jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein. 1
050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 6 8 10 12 14 16 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 90 80 70 60 50 40 30 20 10 0 160 140 120 100 80 60 40 20 0 5 4 3 2 1 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 90 80 70 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 5 4.5 4 3.5 3 2.5 2.0 1.5 1.0 0.05 0 120 100 80 60 40 20 0 i c = 45a t j = 25c v ce =960v v ce =600v v ce =240v t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c = 90a i c = 22.5a i c = 45a t c =125c t c =25c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 22.5a i c = 45a i c = 90a
050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 600v r g = 5 ? l = 100 h v ge = 15v,t j =125c v ge = 15v v ge = 10v v ge =10v,t j =125c v ge = 10v,t j =25c v ge = 15v,t j =25c i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) t j =125c, v ge =15v t j =125c,v ge =10v t j = 25c, v ge =10v t j = 25c, v ge =15v 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 0 20 30 40 50 60 70 80 90 0 10 20 30 40 50 0 25 50 75 100 125 35 30 25 20 15 10 5 0 80 70 60 50 40 30 20 10 0 8000 7000 6000 5000 4000 3000 2000 1000 0 12000 10000 8000 6000 4000 2000 0 180 160 140 120 100 80 60 40 20 0 100 90 80 70 60 50 40 30 20 10 0 6000 5000 4000 3000 2000 1000 0 8000 7000 6000 5000 4000 3000 2000 1000 0 e off 90a e on2 90a e on2 22.5a e off 45a e on2 45a e off 22.5a e on2 22.5a e off 45a e on2 45a e on2 90a e off 90a e off 22.5a v ce = 600v t j = 25c or 125c r g = 5 ? l = 100 h v ce = 600v l = 100 h r g = 5 ? v ce = 600v v ge = +15v t j = 125c v ce = 600v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 600v r g = 5 ? , l = 100 h, v ce = 600v t j = 25c, v ge = 10v or 15v t j = 125c, v ge = 10v or 15v v ce = 600v l = 100 h r g = 5 ?
050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves 10 20 30 40 50 60 70 90 10 1 10,000 5,000 1,000 500 100 50 10 180 160 140 120 100 180 160 140 120 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000 i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 800v r g = 5 ? c ies c oes max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = c res figure 19b, transient thermal impedance model 0.0339 0.0806 0.265 0.000443f 0.0269f 0.608f power (watts) junction temp. ( ?c) rc model case temperature note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05
050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit gate voltage collector voltage collector current 90% 0 switching energy t j = 125 c 90% t d(off) t f 10% 10% t d(on) 5% 10% 90% t r 5 % collector current collector voltage gate voltage switching energy t j = 125 c i c a d.u.t. apt30df120 v ce figure 21, inductive switching test circuit v cc
050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves characteristic / test conditions maximum average forward current (t c = 77c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 45a forward voltage i f = 90a i f = 45a, t j = 125c static electrical characteristics unit amps unit volts min typ max 3.67 4.64 2.56 APT45GP120JDF2 24 30 210 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery anti-parallel diode min typ max - 37 - 300 - 370 -4- - 430 - 2025 -9- - 170 - 2970 -31 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 25b, transient thermal impedance model 0.291 c/w 0.468 c/w 0.341 c/w 0.00307 j/ c 0.0463 j/ c 0.267 j/ c power (watts) junction temp ( c) rc model case temperature ( c) z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 25a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.20 1.00 0.80 0.60 0.40 0.20 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05
050-7432 rev c 8-2004 APT45GP120JDF2 t j = 125 c v r = 800v 15a 30a 60a t rr q rr q rr t rr i rrm q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55 c t j = 25 c t j = 125 c t j = 150 c duty cycle = 0.5 t j = 150 c t j = 125 c v r = 800v 35 30 25 20 15 10 5 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) 60a 30a 15a 200 180 160 140 120 100 80 60 40 20 0 5000 4000 3000 2000 1000 0 0 1 2 3 4 5 6 7 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = 125 c v r = 800v 30a 15a 60a 500 400 300 200 100 0 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 25 50 75 100 125 150 1 10 100 200 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 200 150 100 50 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 26. forward current vs. forward voltage figure 27. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 28. reverse recovery charge vs. current rate of change figure 29. reverse recovery current vs. current rate of change t j , junction temperature ( c) case temperature ( c) figure 30. dynamic parameters vs. junction temperature figure 31. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 32. junction capacitance vs. reverse voltage
050-7432 rev c 8-2004 APT45GP120JDF2 typical performance curves sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt10035lll
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